- Bi2Se3 Growth on 🔍
- High|speed 1.3 mu m GaInAs detectors fabricated on GaAs substrates🔍
- ZnO Films on {001}|Cut <110>|Propagating GaAs Substrates for ...🔍
- Development of Si|doped 8|inch GaAs substrates🔍
- Metamorphic In 0.20 Ga 0.80 As pin photodetectors grown on GaAs ...🔍
- Exciton localization in corrugated GaAs/AlAs superlattices grown on ...🔍
- Low|temperature growth of InAs/GaSb superlattices on miscut GaAs ...🔍
- Metamorphic Integration of GaInAsSb Material on GaAs Substrates ...🔍
GaAs Substrates
Bi2Se3 Growth on (001) GaAs Substrates for Terahertz Integrated ...
To understand how best to grow Bi2Se3 on GaAs (001) using molecular beam epitaxy (MBE), we grew three samples with three different substrate preparations using.
High-speed 1.3 mu m GaInAs detectors fabricated on GaAs substrates
non-lattice-matched GaAs substrates but have relied on rather thick epitaxial layers of InP interposed between the GaAs substrate and the GaInAs diode [3] ...
ZnO Films on {001}-Cut <110>-Propagating GaAs Substrates for ...
A potential application for piezoelectric films on GaAs substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs ...
Development of Si-doped 8-inch GaAs substrates - CS ManTech
Large diameter GaAs substrates will need to have axial uniformity equal to or better than current substrates for key wafer characteristics such as carrier ...
Metamorphic In 0.20 Ga 0.80 As pin photodetectors grown on GaAs ...
... GaAs substrates, for a wide variety of applications. ©2011 Optical Society ... materials with respect to the GaAs substrate. Each InGaAs step-layer was ...
Exciton localization in corrugated GaAs/AlAs superlattices grown on ...
Exciton localization in corrugated GaAs/AlAs superlattices grown on (311) GaAs substrates. Z. Y. Xu, Z. L. Yuan, J. Z. Xu, B. Z. Zheng, B. S. ...
Low-temperature growth of InAs/GaSb superlattices on miscut GaAs ...
Go to contents table. Show details. Show details. | Low-temperature growth of InAs/GaSb superlattices on miscut GaAs substrates for mid-wave infrared ...
Metamorphic Integration of GaInAsSb Material on GaAs Substrates ...
The GaInAsSb material has been conventionally grown on lattice-matched GaSb substrates. In this work, we transplanted this material onto the GaAs substrates ...
Development of High-Efficiency GaAs Solar Cells Grown on ...
Inverted GaAs front homojunction devices grown on patterned GaAs(001) substrates achieved threading dislocation densities below 5 × 105cm-2and ...
Planarization of Rough (100) GaAs Substrates via Growth by ...
Initial devices grown by HVPE on a pre-polished substate showed no degradation compared to a control wafer, indicating that planarizing rough ...
Growth of high quality InSb thin films on GaAs substrates by ...
A series of InSb thin films were grown on GaAs substrates by molecular beam epitaxy (MBE). GaSb/AlInSb is used as a compound buffer layer to release the strain ...
Comparative Study on the Growth of Silver Nanoplates on GaAs ...
Optical Characterization of the Ag Nanoplates. The Ag nanoplates grown on GaAs substrates were transferred onto transparent Scotch tapes by ...
Planar GaAs nanowires on GaAs (100) Substrates: Self-aligned ...
Abstract. We report the controlled growth of planar GaAs semiconductor nanowires on (100) GaAs substrates using atmospheric pressure metalorganic chemical vapor ...
Achieving high-quality In0.3Ga0.7As films on GaAs substrates by ...
The effects of the thickness of the large-mismatched amorphous In0.6Ga0.4As buffer layer on In0.3Ga0.7As epi-films grown on a GaAs substrate have been ...
Wet chemical cleaning process of GaAs substrate for ready-to-use
To prepare epi-ready GaAs wafer, we used NH4OH mixture to remove particles and metals as a first step of wet-chemical cleaning and acidic peroxide mixture to ...
Whispering Gallery Lasers on Semi-Insulating GaAs Substrates
... GaAs substrates.1,2,3 A severe limit however is placed on the maximum allowable chip size if the lasers are formed between parallel cleaved facets. This ...
AlGaAs/GaAs Passive Waveguide Epiwafers
These epiwafers consist of alternating layers of aluminum gallium arsenide (AlGaAs) and gallium arsenide (GaAs) deposited on a gallium arsenide substrate.
Tutorial 1: Semiconductor Materials: Ge, Si, and GaAs - YouTube
In this video, I discuss about the three most commonly used semiconductor materials in the electronics field: Silicon, Germanium, ...
Gate-defined GaAs/AlGaAs Lateral Quantum Dots Nanofabrication
Gate-defined GaAs/AlGaAs Lateral Quantum Dots Nanofabrication | Protocol Preview ... Princeton Center for Complex Materials - PCCM•14K views · 6: ...