- Achieving high|quality In0.3Ga0.7As films on GaAs substrates by ...🔍
- Quality|enhanced In0.3Ga0.7As film grown on GaAs substrate with ...🔍
- Quality|enhanced In 0.3 Ga 0.7 As film grown on GaAs substrate ...🔍
- x As interlayer on the properties of In 0.3 Ga 0.7 As epitaxial films ...🔍
- RSC Advances🔍
- The relationship between the dislocations and microstructure in In0 ...🔍
- Surface Morphology of GaAs/In0.3Ga0.7As in an Elastic Field of ...🔍
- Tilt generation and phase separation in metamorphic GaInP buffers ...🔍
Achieving high|quality In0.3Ga0.7As films on GaAs substrates by ...
Achieving high-quality In0.3Ga0.7As films on GaAs substrates by ...
The effects of the thickness of the large-mismatched amorphous In0.6Ga0.4As buffer layer on In0.3Ga0.7As epi-films grown on a GaAs substrate have been ...
Achieving high-quality In0.3Ga0.7As films on GaAs substrates by ...
Achieving high-quality In0.3Ga0.7As films on GaAs substrates by low-temperature molecular beam epitaxy. Fangliang Gao,a Lei Wen,a Jingling Li,a Yunfang Guan ...
Achieving high-quality In0.3Ga0.7As films on GaAs substrates by ...
Request PDF | Achieving high-quality In0.3Ga0.7As films on GaAs substrates by low-temperature molecular beam epitaxy | The effects of the thickness of the ...
Quality-enhanced In0.3Ga0.7As film grown on GaAs substrate with ...
Using low-temperature molecular beam epitaxy, amorphous In0.6Ga0.4As layers have been grown on GaAs substrates to act as buffer layers for ...
Quality-enhanced In0.3Ga0.7As film grown on GaAs substrate with ...
... achieve high-quality In0.3Ga0.7As film on GaAs substrate and, therefore, is of huge potential for the InGaAs-based high-efficiency photovoltaic industry.
Achieving high-quality In0.3Ga0.7As films on GaAs substrates by ...
The effects of the thickness of the large-mismatched amorphous In0.6Ga0.4As buffer layer on the In0.3Ga0.7As epi-films grown on the GaAs substrate have been ...
Quality-enhanced In 0.3 Ga 0.7 As film grown on GaAs substrate ...
Using low-temperature molecular beam epitaxy, amorphous In0.6Ga0.4As layers have been grown on GaAs substrates to act as buffer layers for ...
Quality-enhanced In0.3Ga0.7As film grown on GaAs substrate with ...
Achieving high-quality In0.3Ga0.7As films on GaAs substrates by low-temperature molecular beam epitaxy · Engineering, Materials Science · 2014.
x As interlayer on the properties of In 0.3 Ga 0.7 As epitaxial films ...
One effective way is use multilayer buffer layers to boost the crystallinity of In0.3Ga0.7As on Si substrates [6], [7]. However, this approach ...
67As, which results in high-quality In0.3Ga0.7As film. The subsequent epitaxial growth of. In0.3Ga0.7As films on GaAs substrates demonstrates ...
Quality-enhanced In0.3Ga0.7As film grown on GaAs substrate with ...
Achieving high-quality In0.3Ga0.7As films on GaAs substrates by low-temperature molecular beam epitaxy. CrystEngComm, 2014, 16, 10774 ...
The relationship between the dislocations and microstructure in In0 ...
Gao, F. et al. Achieving high-quality In0.3Ga0.7As films on GaAs substrates by low-temperature molecular beam epitaxy. CrystEngComm 16, 10774– ...
Surface Morphology of GaAs/In0.3Ga0.7As in an Elastic Field of ...
nitude, thicker films can achieve high quality; in contrast, ... .7As thin films are grown on GaAs sub- ... films and the substrate. Three In0.3Ga0.7As thin.
Tilt generation and phase separation in metamorphic GaInP buffers ...
3Ga0.7As solar cells to bridge the 2.2% lattice mismatch between GaAs and In0.3Ga0.7As epilayers [11]. Although the TD density has been significantly ...
Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin ...
Achieving high-quality In0.3Ga0.7As films on GaAs substrates by low-temperature molecular beam epitaxy. CrystEngComm 2014, 16, 10774– 10779 ...
Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin ...
It has been generally believed that the broadening of XRC profiles in heteroepitaxial layers is caused by the formation of high densities of threading defects.
Effects of buffer layer thickness on the surface roughness of In0 ...
3Ga0.7As thin film on a GaAs substrate, a total of 2.2% misfit strain must be relaxed through well-designed buffer layer structures.
Effect of InxGa1-xAs interlayer on the properties of In0.3Ga0.7As ...
Related Papers (5). Achieving high-quality In0.3Ga0.7As films on GaAs substrates by low-temperature molecular beam epitaxy ... Effect of GaAs substrate ...
Inverted GaInP / (In)GaAs / InGaAs Triple-Junction Solar Cells with ...
on the performance of 1.0 eV In0.3Ga0.7As solar cells [9]. The ... InGaP films from GaAs substrates”, Appl. Phys. Lett. 76, 2000, pp ...
Study of the Growth and Dislocation Blocking Mechanisms in In x Ga ...
In the experiment, InGaP and InGaAs samples were grown on epi-ready GaAs (001) substrates with 6° offcut toward [110] direction. Metalorganic ...