Annealing induced phase transformation from amorphous to ...

Here, first time we report the influence of annealing on physical and photodetection properties of thermally evaporated SnSe 2 thin films.

Annealing-induced phase transformation in In10Se70Te20 thin films ...

The observed changes in the film structure and optical behaviour are due to the annealing-induced phase formation from the In10Se70Te20 host ...

Deposited thin films are slowly vacuum annealed at 50°, 100°, 150° and 200 °C for 2 h. XRD pattern demonstrated annealing induced phase ...

Annealing induced phase transformations in amorphous As2S3 films

Measurements of the glass transition temperature indicate that a crystallization process initiates at annealing temperatures around 170 ° C ⁠. In combination ...

Annealing induced phase transformation from amorphous to ...

XRD pattern demonstrated annealing induced phase transformation from amorphous to polycrystalline thin film. UV–Vis-NIR spectroscopy displayed red shift in ...

Annealing induced phase transformations in amorphous As2S3 films

Annealing induced phase transformations in amorphous As 2 S 3 films ... Amorphous arsenic sulphide ( As 2 S 3 ) films prepared by ultrafast pulsed ...

Annealing induced phase transformations in amorphous As>2>S >3 ...

Amorphous arsenic sulphide (As2S3) films prepared by ultrafast pulsed laser deposition have been vacuum annealed at a range of different temperatures.

Annealing Induced Phase Transformation in Amorphous As2S3 Films

Abstract and Figures. Amorphous arsenic sulphide (As2S3) films prepared by ultrafast pulsed laser deposition have been vacuum annealed at a ...

Annealing induced phase transformation from amorphous to ... - OUCI

Annealing induced phase transformation from amorphous to polycrystalline SnSe2 thin film photo detector with enhanced light-matter interaction. https://doi ...

Annealing induced transformations in structural and optical ...

The X-ray diffraction characterization revealed the amorphous to crystalline phase transformation with annealing. The indirect optical band gap decreased with ...

Annealing-induced phase transition in zinc phthalocyanine ultrathin ...

This indicates that there is no structural change during low temperature annealing. As the annealing temperature increases to 150 °C, the primary peak at ~0.51 ...

Amorphous phase growth by isothermal annealing-induced ...

The amorphous layers in the Ni/Ti multilayered composites continue to grow until they have attained a temperature-dependent critical thickness or a temperature- ...

Annealing induced phase transformations in amorphous As2S3 films

Measurements of the glass transition temperature indicate that a crystallization process initiates at annealing temperatures around 170°C. In combination with ...

Deformation-induced crystalline-to-amorphous phase transformation ...

While plastic deformation in this alloy is usually dominated by dislocation slip and deformation twinning, our in situ straining transmission ...

Annealing-induced phase transformation in In10Se70Te20 thin films ...

Annealing-induced phase transformation in In10Se70Te20 thin films and its structural, optical and morphological changes for optoelectronic applications.

Annealing of nanoindentation-induced high pressure crystalline ...

Annealing of nanoindentation-induced high pressure crystalline phases created in crystalline and amorphous silicon ... Thermally induced phase transformation ...

Annealing induced phase transformations in amorphous As 2 S 3 films

Dive into the research topics of 'Annealing induced phase transformations in amorphous As2S 3 films'. Together they form a unique fingerprint. Sort by ...

The laser annealing induced phase transition in silicon: a molecular ...

... phase transition form amorphous to liquid caused by the laser annealing could influence the subsequent recrystallization and the activation of the dopants.

Correlation of indentation-induced phase transformations with the ...

The probability for amorphous silicon (a-Si) to phase transform under indentation testing is statistically determined as a function of annealing temperature ...

Phase transformation of Ni/Si thin films induced by nanoindentation ...

Following annealing at temperatures of 200∼500°C, the indented zone contains either a mixture of amorphous phase and Si III and Si XII phases, ...