Dark Current Modeling and Characterization of Amorphous Lead ...

Dark Current modeling and characterization of amorphous lead ...

This includes determining the most appropriate a-PbO multilayer detector structures with specially designed blocking layers that will withstand the high ...

Keywords: Amorphous lead oxide; blocking layer; mathematical model; dark current; direct conversion; kinetics; polyimide; X-ray detector. Page 47. 35. 2.1 ...

Dark Current Modeling for a Polyimide—Amorphous Lead Oxide ...

The reduction of the dark current (DC) to a tolerable level in amorphous selenium (a-Se) X-ray photoconductors was one of the key factors ...

Dark Current Modeling for a Polyimide—Amorphous Lead Oxide ...

The reduction of the dark current (DC) to a tolerable level in amorphous selenium (a-Se) X-ray photoconductors was one of the key factors that led to the ...

Dark Current Modeling for a Polyimide-Amorphous Lead Oxide ...

The reduction of the dark current (DC) to a tolerable level in amorphous selenium (a-Se) X-ray photoconductors was one of the key factors ...

Investigation of dark current mechanisms in a polyimide blocking ...

Request PDF | Investigation of dark current mechanisms in a polyimide blocking layer utilized in an amorphous lead oxide-based x-ray detector | Amorphous ...

Characterization of Low Dark-Current Lateral Amorphous-Selenium ...

Characterization of Low Dark-Current Lateral Amorphous-Selenium Metal-Semiconductor-Metal Photodetectors ... Abstract: We report a lateral ...

Ultralow Dark Currents in Avalanche Amorphous Selenium ...

We have measured the lowest dark current density ever reported (30 pA/cm2 at the onset of avalanche) compared to any other solid-state avalanche ...

Dark current mechanisms in amorphous Selenium X- ray imaging ...

A physics based analysis is done in this chapter to determine the optimum trap depth in the n-layer for an efficient hole blocking layer. 3.3 The model. In a-Se ...

Use of Pulse-Height Spectroscopy to Characterize the Hole ...

Dark Current Modeling for a Polyimide—Amorphous Lead Oxide-Based Direct Conversion X-ray Detector · Physics, Materials Science. Sensors · 2022.

Modeling and Characterization of Amorphous Silicon Thin Film ...

Table 4-2: Drain current modeling parameters ... Currently, amorphous Si ... limits the current flow leading to non-linear, Schottky-like behavior.

Characterization of Low Dark-Current Lateral Amorphous-Selenium ...

It has a bandgap of 2.2 eV and can achieve high photodetection efficiency at short wavelengths less than 400 nm which makes it appealing for indirect conversion ...

Preparation & Characterization of n-Type Amorphous Selenium ...

Dark Current Modeling for a Polyimide—Amorphous Lead Oxide-Based Direct Conversion X-ray Detector · Physics, Materials Science. Sensors · 2022.

Dark current modeling of thick perovskite X-ray detectors

Moreover, through the semiconductor device analysis and simulation, we reveal that the main current compositions of thick perovskite X-ray ...

Performance Evaluation of an Amorphous Selenium Photodetector ...

Reznik, “Dark cur- rent modeling for a polyimide—Amorphous lead oxide-based direct conversion X-ray detector,” Sensors, vol. 22, no. 15, p. 5829 ...

Dark current mechanisms in amorphous Selenium X-ray imaging ...

This analysis is important for the origin of time and bias dependent dark current being steady state. The improved model has been applied to ...

Construction and characterization of an amorphous silicon flat-panel ...

The diode shows a leakage current of 2 pA/mm 2 at −5 V and dark current uniformity of the detector is 2.5%. The modulation transfer function (MTF) of the ...

Flexible UV detectors based on in-situ hydrogen doped amorphous ...

Importantly, the photocurrent of the corresponding device is still as high as 1.37 × 10−3 A, leading to a high photo-to-dark current ratio of 2.65 × 107 and ...

The X-ray Sensitivity of an Amorphous Lead Oxide Photoconductor

After the irradiation is terminated, the photocurrent rapidly drops to a dark current level, demonstrating almost negligible signal lag. A detailed analysis ...

Characterization of dark current in Ge-on-Si photodiodes

The mechanisms responsible for the dark current in these devices are studied using geometric analysis, temperature-dependent current-voltage ...