Low|temperature amorphous oxide semiconductors for thin|film ...

Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film ...

A facile low-pressure annealing (LPA) method is proposed for the activation of indium oxide (InOx) semiconductors at a significantly low ...

Amorphous oxide semiconductors: From fundamental properties to ...

Amorphous oxide semiconductors (AOSs) have exceptional features of high visible transparency, high carrier mobility, excellent uniformity, and low-temperature ...

Low-temperature amorphous oxide semiconductors for thin-film ...

For maintaining low driving voltages, a sputtered multicomponent/multi-layered high-κ dielectric (Ta2O5+SiO2) was developed for low temperature IGZO TFTs which ...

Low-temperature-processable amorphous-oxide-semiconductor ...

Amorphous gallium oxide films doped with rare-earth elements (Eu, Pr, and Tb) were employed as AOS emission layers, and the LEDs emitted clear ...

Room-temperature fabrication of transparent flexible thin-film ...

These achievements imply that transparent amorphous oxide semiconductors have the potential to overtake a-Si:H, and are promising materials for ...

Temperature dependent electron transport in amorphous oxide ...

Abstract: A temperature-dependent mobility model in amorphous oxide semiconductor (AOS) thin film transistors (TFTs) extracted from measurements of ...

Low-Temperature Amorphous Oxide Semiconductors for Thin-Film ...

For maintaining low driving voltages, a sputtered multicomponent/multi-layered high-κ dielectric (Ta2O5+SiO2) was developed for low temperature IGZO TFTs which ...

Development of extremely low temperature processed oxide thin film ...

This is because amorphous oxide semiconductors have high mobility, optical transparency, and relatively low temperature processing capabilities ...

Low-temperature processable amorphous In-W-O thin-film ...

Thin-film transistors (TFTs) with a high stability and a high field-effect mobility have been achieved using W-doped indium oxide semiconductors in a low- ...

Low‐Temperature Thin‐Film Combustion Synthesis of Metal‐Oxide ...

The unique performance characteristics of amorphous, optically transparent metal‐oxide electronic materials fill the gap between amorphous silicon and ...

Amorphous thin-film oxide power devices operating beyond bulk ...

Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit.

High Performance Amorphous IGO Thin Film Transistors Grown at ...

In recent years, amorphous oxide semiconductor has been widely investigated in the field of thin film transistors (TFTs) due to its low cost, ...

Atomically Thin Amorphous Indium–Oxide Semiconductor Film ...

Despite being fabricated in a solution processed at a low temperature of 300 °C, InOx TFTs with optimal thicknesses of about 3 nm exhibited high field-effect ...

Amorphous Oxide Semiconductors for High-Performance Flexible ...

Recently, we have demonstrated the potential of amorphous oxide semiconductors (AOSs) for developing flexible thin-film transistors (TFTs).

Flexible and High-Performance Amorphous Indium Zinc Oxide Thin ...

We fabricated thin-film transistors with the ALD IZO thin films as the active layer. ALD growth temperature-dependent TFT performance was ...

Low-temperature thin-film combustion synthesis of metal-oxide ...

The unique performance characteristics of amorphous, optically transparent metal-oxide electronic materials fill the gap between amorphous ...

Electronic Structure of Low-Temperature Solution-Processed ...

The electronic structure of low temperature, solution-processed indium-zinc oxide thin-film transistors is complex and remains ...

Electronic Structure of Low‐Temperature Solution‐Processed ...

The electronic structure of low temperature, solution-processed indium–zinc oxide thin-film transistors is complex and remains insufficiently understood.

Amorphous Oxide Semiconductors for High-Performance Flexible ...

Recently, we have demonstrated the potential of amorphous oxide semiconductors (AOSs) for developing flexible thin-film transistors (TFTs).

Material characteristics and applications of transparent amorphous ...

Transparent amorphous oxide semiconductors have unique electron transport properties, such as large electron mobility (10–50 cm2/Vs) and the absence of a ...