Spin|acoustic control of silicon vacancies in 4H silicon carbide

Spin-acoustic control of silicon vacancies in 4H silicon carbide

Here we report the spin-acoustic control of naturally occurring negatively charged silicon monovacancies in a lateral overtone bulk acoustic ...

Spin-Acoustic Control of Silicon Vacancies in 4H Silicon Carbide

We show that acoustic driving can be used at room temperature to induce coherent population oscillations. Spin acoustic resonance is then ...

(PDF) Spin-acoustic control of silicon vacancies in 4H silicon carbide

Here we report the spin-acoustic control of naturally occurring negatively charged silicon monovacancies in a lateral overtone bulk acoustic resonator that is ...

Spin-acoustic control of silicon vacancies in 4H silicon carbide

Spin-acoustic control demonstrated on a 4H silicon carbide-based bulk acoustic resonator allows frequency-tunable probing of resonances, aiding in dynamic ...

A strategy for the spin-acoustic control of silicon vacancies in a 4H ...

A strategy for the spin-acoustic control of silicon vacancies in a 4H silicon carbide-based bulk acoustic resonator ... Bulk acoustic resonators— ...

Spin Acoustic Control and Metrology with Silicon Vacancies in ...

... Acoustic Resonator fabricated out of high purity semi-insulating 4H-Silicon Carbide ... Spin Acoustic Control and Metrology with Silicon Vacancies in Silicon ...

Sunil Bhave on LinkedIn: Spin-acoustic control of silicon vacancies ...

Quantum MEMS at the wafer-scale in 4H Silicon Carbide In this collaboration between my OxideMEMS Lab @ Purdue University and Evelyn Hu lab ...

Spin-acoustic control of silicon vacancies in 4H silicon carbide - OUCI

Here we report the spin-acoustic control of naturally occurring negatively charged silicon monovacancies in a lateral overtone bulk acoustic resonator that is ...

High-fidelity spin and optical control of single silicon-vacancy ...

The structure of the 4H-SiC crystal results in two non-equivalent sites for a VSi. As shown in Fig. 1a, we investigate the defect centre that is ...

arXiv:2205.15488v1 [physics.app-ph] 31 May 2022

... 4H-Silicon Carbide (SiC). These experiments provide a first step ... SPIN-ACOUSTIC CONTROL OF SILICON VACANCIES IN 4H SILICON CARBIDE. 3.

Aaron Day on LinkedIn: Spin-acoustic control of silicon vacancies in ...

Quantum MEMS at the wafer-scale in 4H Silicon Carbide In this collaboration between my OxideMEMS Lab @ Purdue University and Evelyn Hu lab ...

Acoustically Induced Spin Resonances of Silicon-Vacancy Centers ...

The long-lived and optically addressable spin states of silicon vacancies (VSi) in 4H-SiC make them promising qubits for quantum communication and sensing.

Controlled Spalling of 4H Silicon Carbide with Investigated Spin ...

We detail scientific and engineering advances which enable the controlled spalling and layer transfer of single crystal 4H silicon carbide (4H-SiC) from bulk ...

Enhanced cavity coupling to silicon vacancies in 4H silicon carbide ...

The negatively charged silicon monovacancy V Si − in 4H silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit in solid- ...

Purcell Enhancement and Spin Spectroscopy of Silicon Vacancy ...

Silicon vacancy (VSi) centers in 4H-silicon carbide have emerged as a strong candidate for quantum networking applications due to their ...

Spin coherence as a function of depth for high-density ensembles of ...

The silicon vacancy in silicon carbide has recently emerged as a new candidate for optically controlled spin qubits with significant material benefits over ...

Acoustically Induced Spin Resonances of Silicon-Vacancy Centers ...

The long-lived and optically addressable spin states of silicon vacancies (VSi) in 4H-SiC make them promising qubits for quantum ...

Spin and Optical Properties of Silicon Vacancies in Silicon Carbide ...

We discuss the fine structure and spin dynamics of spin-3/2 centers associated with silicon vacancies in silicon carbide.

type silicon vacancy spin defect in 4H-SiC MOSFETs - NASA/ADS

Abstract. Color centers in silicon carbide (4H-SiC) are potentially usable as spin defects for quantum sensing and quantum information technology.

Charge state control of the silicon vacancy and divacancy in silicon ...

In the development of solid-state spin qubits, the nitrogen-vacancy (NV) center in diamond is the leading contender.3,4 Recently, SiC has ...