Surface Morphology of GaAs/In0.3Ga0.7As in an Elastic Field of ...

The surface morphology InGaAs layers with In composition of 0.3 on GaAs (001) substrates are simulated by the phase field method. We investigate the influence ...

Surface Morphology of GaAs/In0.3Ga0.7As in an Elastic Field of Static. Point Defects *. WU Ping-Ping(吴平平), GAO Fang-Liang(高芳亮), ZHANG Shu-Guang(张曙光) ...

Surface Morphology of GaAs/In0.3Ga0.7As in an Elastic Field of ...

Request PDF | Surface Morphology of GaAs/In0.3Ga0.7As in an Elastic Field of Static Point Defects | The surface morphology InGaAs layers with In composition ...

Surface Morphology of GaAs/In0.3Ga0.7As in an Elastic Field of ...

Surface Morphology of GaAs/In0.3Ga0.7As in an Elastic Field of Static Point Defects. WU Ping-Ping ,; GAO Fang-Liang ,; ZHANG Shu-Guang ,; LI Guo-Qiang.

Surface Morphology of GaAs/In 0.3 Ga 0.7 As in an Elastic Field of ...

Abstract The surface morphology InGaAs layers with In composition of 0.3 on GaAs (001) substrates are simulated by the phase field method.

Issue 2 - Volume 31 - Chinese Physics Letters - IOPscience

We investigate the influence of the strain field induced by static point defects on surface morphology of the InGaAs thin film. Our simulation demonstrates that ...

Pingping Wu

Surface Morphology of GaAs/In0.3Ga0.7As in an Elastic Field of Static Point Defect Chinese Physics Letters, 2014. 31(14):Art. No. 026802. 2013. L. Hong, Y. L. ...

Investigation of cross-hatch in In0.3Ga0.7As pseudo-substrates

The surface morphology of InGaAs metamorphic substrates grown on a GaAs has been investigated using conventional means and analysis of the ...

In situ monitoring of the 2D–3D growth-mode transition in In0.3Ga0 ...

We report on in situ RD measurements of In0.3Ga0.7As/GaAs epitaxial layers, 0–75 Å thick, grown by Molecular Beam Epitaxy (MBE) on GaAs (0 0 1).

Effects of buffer layer thickness on the surface roughness of In0 ...

3Ga0.7As thin film grown on the GaAs substrate with In0.15Ga0.85As buffer layer structures. The evolution of the surface morphology, RMS ...

Design of InxGa1−xAs buffer layers for epitaxial growth of high ...

7As films on GaAs substrates demonstrates that the surface RMS roughness ... Surface Morphology of GaAs/In0.3Ga0.7As in an Elastic Field of Static Point Defects.

Chinese Physics Letters - 中国物理学会期刊网

Surface Morphology of GaAs/In0.3Ga0.7As in an Elastic Field of Static Point Defects. WU Ping-Ping, GAO Fang-Liang, ZHANG Shu-Guang, LI Guo-Qiang. 2014, 31(2) ...

Crosshatched surface morphology in strained III-V semiconductor films

Ino 3Gao 7As grown on GaAs at 520 °C. Instead of a surface crosshatched ... rough textured surface is found on the In.3Ga0.7As. FIG. 4. Nomarski optical ...

Selective MOCVD growth of single-crystal dense GaAs quantum dot ...

Here, we demonstrate that GaAs QDs with a 12 nm diameter peak distribution and high density (∼5.5–6.9×1010/cm2) can be achieved employing cylinder-forming ...

Pseudomorphic InGaAs Materials - DTIC

-3Ga0.7As/In0 Ga0.7As interface, inducing nonparabolicity into the ... * "Subband Occupation and Effective Masses of In0.3Ga0.As/GaAs Thin Strained Layer.

Fabrication and Characterization of Three-Dimensional InGaAs ...

A sacrificial layer of AlAs was grown onto a GaAs buffer layer at 580 °C. The subsequent 11-nm-thick InGaAs layer was deposited at 510 °C. An In ...

[PDF] Design of InxGa1−xAs buffer layers for epitaxial growth of ...

A phase field model is developed to simulate In0.3Ga0.7As thin films grown on an GaAs substrate with different buffer layer structures.

Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots

After the droplet etching process, we introduce different amounts of GaAs material, leading changes in surface morphology from Figure 1b to 1e. ... 7As, In0.2Ga0.

Different Approaches to Improve Metamorphic Buffer Layers Grown ...

Fig 4-2: Optical microscope image of cross-hatch in In0.3Ga0.7As layer grown metamorphically on GaAs. (001) substrate. 4.3 Background. Surface CH morphology was ...

STRAINED Ge AND GeSn BAND ENGINEERING FOR Si ...

In0.3Ga0.7As. GaAs. (a). Page 78. 56. Surface roughness is particularly critical ... migration, defect termination at the top surface, top surface morphology, and ...