Temperature|Dependent Ferroelectric Behaviors of AlScN|Based ...

Temperature-Dependent Ferroelectric Behaviors of AlScN-Based ...

The ferroelectric switching behavior of a metal–ferroelectric AlScN–HfO2 interlayer–metal (MFIM) capacitor was investigated at variable ...

High-Temperature Ferroelectric Behavior of Al0.7Sc0.3N - NREL

Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: Pyroelectricity and Reliability ...

High-Temperature Ferroelectric Behavior of Al0.7Sc0.3N - PubMed

Here, we demonstrate how AlScN can enable high-temperature (>200 °C) nonvolatile memory. The c-axis textured thin films were prepared via ...

Article Versions Notes - MDPI

Temperature-Dependent Ferroelectric Behaviors of AlScN-Based Ferroelectric Capacitors with a Thin HfO2 Interlayer for Improved Endurance and Leakage Current.

High-Temperature Ferroelectric Behavior of Al0.7Sc0.3N

While ferroelectric NVM has previously demonstrated long polarization retention and >1013 read/write cycles at room temperature, the largest hurdle comes at ...

Composition and temperature dependent remanent polarization and ...

Composition and temperature dependent remanent polarization and coercive field in wurtzite AlScN ferroelectric memory materials. J. C. ...

[PDF] High-Temperature Ferroelectric Behavior of Al0.7Sc0.3N

Currently, there is a lack of nonvolatile memory (NVM) technology that can operate continuously at temperatures > 200 °C. While ferroelectric NVM has ...

High-Temperature Ferroelectric Behavior of Al 0.7 Sc 0.3 N

We demonstrate how AlScN can enable high-temperature (>200 °C) nonvolatile memory. The c-axis textured thin films were prepared via reactive radiofrequency ...

On the exceptional temperature stability of ferroelectric Al 1-x Sc x N ...

For the in situ electrical characterization, temperature-dependent ... AlScN: A III-V semiconductor based ferroelectric. J. Appl. Phys ...

Strongly temperature dependent ferroelectric switching in AlN, Al1 ...

... Therefore, there is not a single well-defined activation energy for domain switching; comparable behavior has been previously reported for undoped, B-doped, ...

Room-temperature ferroelectric, piezoelectric and resistive switching ...

PFM is used to probe the piezoelectric characteristics, hysteresis behaviors, and field-driven domain reversal. Based on the DFT simulations, ...

Temperature-Dependent Ferroelectric Properties and Aging ...

The dielectric behavior aligns with that seen in dense ferroelectric ceramics albeit with slight perturbations in the Curie point. For example, ...

Temperature dependent polarization-switching behavior in Hf 0.5 Zr ...

Ferroelectricity and polarization-switching behavior were investigated in Hf 0.5 Zr 0.5 O 2 films from 25°C to 150°C.

Temperature-dependent Lowering of Coercive Field in 300 nm ...

Rinaldi, “Characterization of Dielectric and Piezoelectric. Properties of Ferroelectric AlScN Thin Films,” in Proceedings of the. IEEE International Conference ...

Temperature dependent scaling behavior of 0.67PMN–0.33PT ...

Polarization reversal mechanisms are the key to understand the ferroelectric properties. The scaling behaviors of ferroelectric loops reveal ...

Temperature-Dependent Ferroelectric Properties and Aging ... - NCBI

... ferroelectric behavior observed recently in BF-BT. ... Thermally Stable Electrostrain in BiFeO3-BaTiO3-Based High Temperature Lead-Free ...

Temperature dependence of ferroelectricity and domain switching ...

Request PDF | Temperature dependence of ferroelectricity and domain switching behavior in Pb(Zr0·3Ti0.7)O3 ferroelectric thin films | Owing to their high ...

Ferroelectric capacitor compact model including dynamic and ...

In this paper a compact model is presented that takes into account all important effects including temperature and dynamic behavior. The model is based on the ...

Strongly temperature dependent ferroelectric switching in AlN, Al>1 ...

This manuscript reports the temperature dependence of ferroelectric switching in Al0.84Sc0.16N, Al0.93B0.07N, and AlN thin films.

Temperature-dependent model for ferroelectrics embedded into two ...

... behavior based on macroscopic material parameters. Temperature effects on behavior of combined material model are obtained in the work. Furthermore ...