Temperature dependence of exciton lifetimes in high|density GaAs ...

Temperature dependence of exciton lifetimes in high-density GaAs ...

The PL decay time of the (775)B QWRs (τQWR) was 430 ps at 18 K, which is about 20% longer than that (τQW=360 ps) of a GaAs/(GaAs)4(AlAs)2 QW simultaneously ...

Temperature dependence of exciton lifetimes in GaAs/${\mathrm{Al}}

In this case, the free-exciton lifetime increases linearly with temperature (10–30 K) and the dependence of the slope on the well thickness is ...

Temperature Dependence of Exciton Lifetimes in GaAs/AlGaAs ...

The photoluminescence decay times in GaAs/AlGaAs single quantum well structures with layer thickness between 20 Å and 80 Å have been investigated in the ...

Temperature and density dependence of exciton lifetimes in GaAs ...

The experimental results showed that the exciton decay processes were strongly related to the linewidth of the exciton and the exciton binding energy.

Temperature dependence of exciton life-time in GaAs

The PL and PL decay time is found to depend on temperature. At higher temperatures, thermal population of higher excitonic sub-bands and exciton ionization also ...

Temperature and density dependence of exciton lifetimes in GaAs ...

Temperature and density dependence of exciton lifetimes in GaAs/AlGaAs multiple quantum wells. Jang Hee Chu, Jung Chul Seo, Eun Joo Shin, Sung Kyu Yu, Dongho ...

TEMPERATURE DEPENDENCE OF EXCITON LIFETIMES IN GaAs ...

The photoluminescence decay times in GaAs/AlGaAs multi quantum well structures with layer thickness between 2.5nm and 15nm are investigated in the ...

TEMPERATURE DEPENDENCE OF EXCITON LIFETIMES IN GaAs ...

Abstract -The photoluminescence decay times in GaAsIAlGaAs multi quantum well structures with layer thickness between 2.5nm and 15nm.

Temperature dependence of exciton lifetimes in GaAs/AlxGa1-xAs ...

Continuous-wave and time-resolved measurements of the photoluminescence of good-quality single quantum wells at low temperatures find Resonant pumping at ...

Temperature and density dependence of exciton lifetimes in GaAs ...

The photoluminescence linewidths and exciton lifetimes of free excitons in. GaAs/AIGaAs multiple quantum wells were systematically investigated ...

Temperature dependence of exciton lifetimes in high-density GaAs ...

Temperature dependence of exciton lifetimes in high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy.

Temperature-Dependent Exciton Dynamics in a Single GaAs ... - MDPI

According to temperature-dependence measurements, strong exciton–phonon interaction (48 meV) was observed from an excited exciton state in ...

Temperature-Dependent Exciton Dynamics in a Single GaAs ... - NCBI

According to temperature-dependence measurements, strong exciton–phonon interaction (48 meV) was observed from an excited exciton state in ...

(PDF) Temperature Dependence of Exciton Lifetimes in GaAs ...

We attribute the low-energy peak to partial localization of the generated free excitons (high-energy peak) at interface defects induced by local ...

Complex exciton dynamics with elevated temperature in a GaAsSb ...

With increasing temperature to above 80 K, electrons in GaAs are able to overcome the small band offset to enter inside GaAsSb and recombine ...

Temperature dependence of exciton lifetimes in GaAs/AlxGa1-xAs ...

Temperature dependence of exciton lifetimes in GaAs/AlxGa1-xAs single quantum wells ... Phys Rev B Condens Matter. 1993 Apr 15;47(16):10456-10460. doi: 10.1103/ ...

Temperature and excitation intensity dependent luminescence ...

Complementary Exciton Radiative Lifetime and Dephasing Measurements in GaAs Quantum Wells. R. Eccleston, B. F. Feuerbacher, J. Kuhl, W. W. Rühle, and K. Ploog

Temperature-Enhanced Exciton Emission from GaAs Cone-Shell ...

The temperature dependence of the exciton and biexciton peak intensities from GaAs cone-shell QDs is studied at varied excitation power and dot ...

Investigation of temperature-dependent photoluminescence in multi ...

In this study, the temperature dependences of photoluminescence of GaAs-AlxGa1-xAs multi-quantum wells samples with and without p-n junction ...

Temperature and density dependence of exciton lifetimes in GaAs ...

Temperature and density dependence of exciton lifetimes in GaAs/AlGaAs multiple quantum wells ; Optical and quantum electronics 1995-05, Vol.27 (5), p.387-393.