Spin|acoustic control of silicon vacancies in 4H silicon carbide

Anisotropic Spin-Acoustic Resonance in Silicon Carbide at Room ...

Spin-acoustic control of silicon vacancies in 4H silicon carbide · Physics, Materials Science. Nature Electronics · 2023.

Fabrication and quantum sensing of spin defects in silicon carbide

There are two types of silicon-vacancy centers in 4H–SiC: V1 and V2, and their corresponding ZPLs are 861 nm (V1) and 915 nm (V2), respectively [17, 20, 44–46].

Spin-Optical Dynamics and Quantum Efficiency of a Single V1 ...

Recently, silicon vacancy centers in silicon carbide have been identified as a promising system with excellent spin and optical properties. Here ...

Charge state control of the silicon vacancy and divacancy in silicon ...

In the development of solid-state spin qubits, the nitrogen-vacancy (NV) center in diamond is the leading contender.3,4 Recently, SiC has ...

Room Temperature Coherent Control of Defect Spin Qubits in ...

We have identified six distinct defect types in the 4H polytype of SiC (4H-SiC) that, like the nitrogen-vacancy center in diamond, possess electronic bound ...

Optical charge state control of spin defects in 4H-SiC - PMC - NCBI

Defects in silicon carbide (SiC) have emerged as a favorable platform for optically active spin-based quantum technologies.

Resonant Optical Spin Initialization and Readout of Single Silicon ...

The silicon monovacancy in 4H-SiC is a promising candidate for solid-state quantum information processing. We perform high-resolution optical spectroscopy ...

Silicon vacancy center in $4H$-SiC: Electronic structure and spin ...

Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this material's properties and ...

Acoustically Induced Spin Resonances of Silicon-Vacancy Centers ...

The long-lived and optically addressable spin states of silicon vacancies (VSi) in 4H-SiC make them promising qubits for quantum ...

Optical charge state control of spin defects in 4H-SiC - OSTI.GOV

Defects in silicon carbide (SiC) have emerged as a favorable platform for optically active spin-based quantum technologies. Spin qubits exist in specific ...

Controlled Spalling of 4H Silicon Carbide with Investigated Spin ...

two principal, distinct opportunities. First, a hindrance to further widespread adoption of 4H-SiC is the high cost of manufacturing ...

Vanadium spin qubits as telecom quantum emitters in silicon carbide

Ensemble experiments are realized on V-compensated semi-insulating 4H-SiC and 6H-SiC commercial wafers from II-VI materials. Single defects are created by 51V ...

Coherent electrical readout of defect spins in silicon carbide by ...

High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide. ... Optical charge state control of spin defects in 4H-SiC.

Exhaustive characterization of modified Si vacancies in 4H-SiC

The negative charge state of the silicon vacancy has C3v symmetry, a ground state with spin-3/2, and a rich many-body structure [14]. In 4H-SiC, ...

Advances and challenges in 4H silicon carbide: defects and impurities

In comparison to traditional semiconductor materials like single-crystal silicon, the outstanding characteristics of 4H silicon carbide (4H-SiC) ...

Electrically driven optical interferometry with spins in silicon carbide

The excited-state orbitals of these electrons, however, can exhibit stronger coupling to phononic and electric fields. Here, we demonstrate ...

Optical charge state manipulation of divacancy spins in silicon ...

Spin defects in silicon carbide (SiC) have attracted much attentions in various quantum technologies. In this work, we study the optical manipulation of ...

Single photon emission and quantum photonics with silicon carbide

Soykal, O.; Dev, P.; Economou, S. E.; Silicon vacancy center in 4H-SiC: electronic structure ... Room temperature coherent control of defect spin ...

Engineering of Highly Coherent Silicon Vacancy Defects in Silicon ...

Electron spin coherence of silicon vacancies in proton- irradiated 4h-sic. ... Excitation and coher- ent control of spin qudit modes in silicon carbide at room ...

Point defects in silicon carbide for quantum technologies - UiO - DUO

Annealing temperatures above 1200 °C are shown to be needed to induce VC migration, which is further demonstrated to be anisotropic in 4H-SiC, with the VC ...